Daily Papers

We introduce neural lithography to address the 'design-to-manufacturing' gap in computational optics. Computational optics with large design degrees of freedom enable advanced functionalities and performance beyond traditional optics. However, the existing design approaches often overlook the numerical modeling of the manufacturing process, which can result in significant performance deviation between the design and the fabricated optics. To bridge this gap, we, for the first time, propose a fully differentiable design framework that integrates a pre-trained photolithography simulator into the model-based optical design loop. Leveraging a blend of physics-informed modeling and data-driven training using experimentally collected datasets, our photolithography simulator serves as a regularizer on fabrication feasibility during design, compensating for structure discrepancies introduced in the lithography process. We demonstrate the effectiveness of our approach through two typical tasks in computational optics, where we design and fabricate a holographic optical element (HOE) and a multi-level diffractive lens (MDL) using a two-photon lithography system, showcasing improved optical performance on the task-specific metrics.

Superconducting Digital (SCD) technology offers significant potential for enhancing the performance of next generation large scale compute workloads. By leveraging advanced lithography and a 300 mm platform, SCD devices can reduce energy consumption and boost computational power. This paper presents a cross-layer modeling approach to evaluate the system-level performance benefits of SCD architectures for Large Language Model (LLM) training and inference. Our findings, based on experimental data and Pulse Conserving Logic (PCL) design principles, demonstrate substantial performance gain in both training and inference. We are, thus, able to convincingly show that the SCD technology can address memory and interconnect limitations of present day solutions for next-generation compute systems.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

Advancements in high-computing devices increase the necessity for improved and new understanding and development of smart manufacturing factories. Discrete-event models with simulators have been shown to be critical to architect, designing, building, and operating the manufacturing of semiconductor chips. The diffusion, implantation, and lithography machines have intricate processes due to their feedforward and feedback connectivity. The dataset collected from simulations of the factory models holds the promise of generating valuable machine-learning models. As surrogate data-based models, their executions are highly efficient compared to the physics-based counterpart models. For the development of surrogate models, it is beneficial to have publicly available benchmark simulation models that are grounded in factory models that have concise structures and accurate behaviors. Hence, in this research, a dataset is devised and constructed based on a benchmark model of an Intel semiconductor fabrication factory. The model is formalized using the Parallel Discrete-Event System Specification and executed using the DEVS-Suite simulator. The time series dataset is constructed using discrete-event time trajectories. This dataset is further analyzed and used to develop baseline univariate and multivariate machine learning models. The dataset can also be utilized in the machine learning community for behavioral analysis based on formalized and scalable component-based discrete-event models and simulations.

Optical resonances in nanostructures enable strong enhancement of nonlinear processes at the nanoscale, such as second-harmonic generation (SHG), with high-Q modes providing intensified light--matter interactions and sharp spectral selectivity for applications in filtering, sensing, and nonlinear spectroscopy. Thanks to the recent advances in thin-film lithium niobate (TFLN) technology, these key features can be now translated to lithium niobate for realizing novel nanoscale nonlinear optical platforms. Here, we demonstrate a large-area metasurface, realized by scalable nanoimprint lithography, comprising a slanted titanium dioxide (TiO_2) nanograting on etchless TFLN for efficient narrowband SHG. This is enabled by the optimal coupling of quasi-bound state in the continuum (q-BIC) modes with a narrowband pulsed laser pump. The demonstrated normalized SHG efficiency is 0.15%,cm^2/GW, which is among the largest reported for LN metasurfaces. The low pump peak intensity (3.64~kW/cm^2) employed, which enables SHG even by continuous-wave pumping, allows envisioning integrated and portable photonic applications. SHG wavelength tuning from 870 to 920~nm with stable output power as well as polarization control is also achieved by off-normal pump illumination. This versatile platform opens new opportunities for sensing, THz generation and detection, and ultrafast electro-optic modulation of nonlinear optical signals.